Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures

The operation of a semiconductor laser-thyristor based on AlGaAs/GaAs/InGaAs heterostructures with a p-GaAs base thickness of $4.4\ \mu \mathrm{m}$ was under study. At the same supply voltage of 22 V, the drive current amplitude of 138 mA gives a more noticeable current localization near mesa-stripe edge in comparison with the case of the drive current of 1 mA.