Electroforming-Free Y2O3 Memristive Crossbar Array with Low Variability

Transition metal oxides play a very important role to develop the memristive crossbar array for nonvolatile memory for storage and logic operations. However, the development of a high-density memristive crossbar array for complex applications is restricted due to low device yield and high device-to-device (D2D) and cycle-to-cycle (C2C) variability in device switching voltages. Here, we report the fabrication of a stable, highly scalable, reproducible, Y2O3-based memristive crossbar array of (15 x 12) on silicon by utilizing a dual ion beam sputtering system. The fabricated crossbar array exhibits the intrinsic nonlinear characteristics of the memristive element by displaying a high endurance (similar to 7 X 10(5)cycles), high current ratio (>200), good retention (similar to 1.5 X 10(5) s), high device yield, low device-to-device (D2D) (0.25), and cycle-to-cycle (C2C) (0.608) variability in the SET/RESET voltages of the memristive device, which can be further suitable for analog computation and logic operations.