The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices

We investigated the effect of phase separation on the Schottky barrier height (SBH) of InAlAs layers grown by metal-organic chemical vapor deposition. The phase separation into the In-rich InAlAs column and Al-rich InAlAs column of In0.52Al0.48As layers was observed when we grew them at a relatively low temperature of below 600 degrees C. From the photoluminescence spectrum investigation, we found that the band-gap energy decreased from 1.48 eV for a homogeneous In0.52Al0.48As sample to 1.19 eV for a phase-separated InxAl1-xAs sample due to the band-gap lowering effect by In-rich InxAl1-xAs (x > 0.7) region. From the current density-voltage analysis of the InAlAs Schottky diode, it was confirmed that the phase-separated InAlAs layers showed a lower SBH value of about 240 meV than for the normal InAlAs layers. The reduction in SBH arising from the phase separation of InAlAs layers resulted in the larger leakage current in InAlAs Schottky diodes.