Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

Zhong-Ying Huang,Hsuan-Han Chen, Ruo-Yin Liao,Hsiao-Hsuan Hsu, Kuan-Hsiang Lin,Wei-Ting Chen,Shih-Hao Lin,Ching-Chien Huang,Wu-Ching Chou,Chun-Hu Cheng

Thin Solid Films（2022）

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摘要

•Dopant-free HfO2 transistors with negative capacitance were demonstrated.•Ferroelectric HfO2 transistors successfully exhibited a SSof sub-60 mV/decade.•Transistor performancecan achieve ION/IOFF ratio of >107 and IOFF of ∼10–13A/μm.

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关键词

Ferroelectric,Hafnium oxide,Orthorhombic,Nitrogen plasma treatment

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