Mixed-Dimensional van der Waals Engineering for Charge Transfer Enables Wafer-Level Flexible Electronics

Flexible electronics draw intense interest because of their promising potential for emerging applications, which, however, encounter challenging obstacles of material self-limiting fabrication, trade-off mechanical flexibility, and associated moderate electrical performance. Here, wafer-level flexible fully-carbon-integrated transistors via mixed-dimensional van der Waals (vdW) engineering is realized. Remarkable performance includes subthreshold swing of 51.8 mV dec(-1) breaking thermionic limit, outstanding field-effect mobility as high as 313.8 cm(2) V-1 s(-1), and sub-1 V operating voltage. The charge transfer modulation of graphene oxide on carbon nanotube in the vdW-integrated transistors is designed to enhance channel conductance, which is simultaneously confirmed by theoretical calculations and electrical characterizations. Besides, the transistors maintain stable electrical performance after bending under an ultra-small radius of 250 mu m. Exponential-sensitivity temperature sensors and binary-logic inverters are further realized to demonstrate the feasibility of the devices as the building blocks of all-vdW electronics. These results indicate that either the strategy of all-vdW transistor realization or the charge transfer provides general approach to improve device performance and further advance flexible electronic technologies.