Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO4 (0001) substrates

GaN layers are grown on 2 inch ScAlMgO4 (0001) nominally on-axis substrates by metalorganic vapor phase epitaxy. The epilayer structural qualities are comparable to those of conventional GaN on sapphire (0001) substrates. The wafer curvature is investigated using X-ray diffraction, and the results suggest suppressed bowing in the GaN/ScAlMgO4 heterostructures compared with the GaN/sapphire heterostructures. This result is attributed to a smaller mismatch of the thermal expansion coefficients in GaN/ScAlMgO4. The suppressed bowing can be beneficial for device processes.