Electronic Structure of Silicon Oxynitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition for Memristor Application

Timofey Viktorovich Perevalov, V.A. Volodin,Gennadiy Kamaev, Andrey Gismatulin,Svetlana Cherkova, Igor' Prosvirin,Kseniya Astankova,Vladimir Gritsenko

SSRN Electronic Journal（2022）

引用 7|浏览3

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摘要

•The plasma power effect on Si-rich PECVD SiOxNy:H electronic structure is studied.•An increase in plasma generator power leads to a decrease in the content of Si and O.•The a-Si/SiOxNy interface energy diagram is constructed within DFT simulation.•The studied films are suitable for the use as active medium of a forming-free RRAM.

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关键词

Silicon oxynitride,Chemical vapor deposition,Electronic structure,XPS,FTIR,Memristors

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