Thermal and Electrical Performance of Negative Capacitance FinFET on GaAs

Along with the COVID-19 pandemic and the large-scale application of 5G, IoT has become more critical for our daily lives. GaAs is a promising semiconductor for field effect transistors in IoT applications. Due to the high electron mobility of GaAs, n-type FinFET based on GaAs is expected with a higher conductance and electron velocity than Silicon. FinFET based on GaAs has a lower subthreshold swing (SS) and higher I on /I off than FinFET based on Silicon, particularly at high temperatures.Negative Capacitance FinFET(NC-FinFET) is an important emerging technology for low-power applications. To further enhance the performance of the GaAs FinFET, we incorporate Hf 0.5 Zr 0.5 O 2 films in the gate to achieve Negative Capacitance (NC). The NC effect brings a higher I on /I off and a negative coefficient to reduce the SS of the FinFET. Our simulation research proves the GaAs-NC-FinFET has the slightest SS variation in 300K-400K and maximum I on /I off compared with other FinFETs.