Gold nanowire electrodes for flexible organic thin-film transistors

A flexible organic thin-film transistor (OTFT) with gold nanowire (AuNW) networks as source/drain/gate electrodes (AuNW-OTFT) was fabricated and characterized. Its fabrication was enabled by the successful formation of AuNW network electrodes on a flexible thin-film substrate using the thermal pressing transfer method. The fabricated AuNW-OTFT exhibited typical p-type characteristics (mobility: 6.0 x 10(-2) cm(2) V(-1 )s(-1), on/off ratio: 10(5)) and a lower contact resistance than that of an OTFT with vacuum-deposited Au electrodes in the same configuration. Furthermore, the AuNW-OTFT demonstrated high mechanical durability, as proven by the absence of significant characteristic changes before and after bending (bending radius:0.8 mm).