A Complementary Logic-In-Memory Inverter from Organic-Inorganic Hybrid Transistors

Logic-in-memory (LIM) technology is an important technology that overcomes the bottleneck, a limitation of the von Neumann architecture. As described in previous reports, the LIM technology was fabricated with a resistive load inverter structure. However, there are some limitations due to the high-power consumption issue and low noise margin. As a result, the need for a LIM device with a complementary structure has emerged. Here, we propose a LIM architecture-based organic-inorganic complementary inverter circuit with a stable noise margin using a p-type floating-gate transistor memory (FGTM) and an n-type zinc-tin oxide (ZTO) thin-film transistor (TFT). We demonstrate that the output of the proposed complementary inverter circuit is determined according to the state of the FGTM memory.