On-chip Broadband Terahertz Amplitude Modulator Based on GaAs-diodes
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)(2022)
摘要
An On-chip ultra broadband terahertz amplitude modulator based on GaAs-diodes is prenented in this paper. In this on-chip modulator, the microstructure is combined with semiconductor material to form the modulation unit. By controlling the resonance characteristic of the modulation unit, we realize the broadband modulation of terahertz waves. And We have experimentally demonstrated the modulation of terahertz waves in a wide frequency band (0.21 to 0.26 THz).
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关键词
modulation unit,broadband modulation,terahertz waves,chip broadband terahertz amplitude modulator,on-chip ultra broadband terahertz amplitude modulator,gallium arsenide-diodes,semiconductor material,resonance characteristic,frequency 0.21 THz to 0.26 THz,GaAs
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