A 140-220-GHz Low-Noise Amplifier With 6-dB Minimum Noise Figure and 80-GHz Bandwidth in 130-nm SiGe BiCMOS

This letter presents an ultra-broadband low-noise amplifier (LNA) with a 3-dB bandwidth of 80 GHz, covering the entire WR5 frequency band (140-220 GHz). Broadband gain and noise performance are obtained through optimal bias selection, dc coupling, and stagger tuning. Y-factor noise figure (NF) measurement results are presented. A NF of 6.9, 6.1, and 8.2 dB is measured at 150, 180, and 210 GHz. Implemented in IHP 130-nm SiGe BiCMOS process, the LNA has a peak gain of 15.5 dB, while consuming 46-mW dc power.