A High-Order Temperature-Compensated Subthreshold Voltage Reference Using Channel Length Modulation Compensation Technique

The paper presents a novel high-order temperature-compensated subthreshold voltage reference that utilizes temperature characteristics of the gate-to-source voltage of subthreshold MOS transistor. The proposed high-order temperature-compensated voltage reference has been designed using two CMOS voltage references and a current subtraction circuit to achieve a low temperature coefficient over a wide temperature range. The proposed circuit offers an output reference voltage of 250.8 mV, line sensitivity of 0.0674