Demonstration of a 10-kV Class Waffle-Substrate n-Channel IGBT in 4H-SiC
IEEE Transactions on Electron Devices(2022)
摘要
The silicon carbide (SiC) waffle-substrate
${n}$
-channel insulated gate bipolar transistor (IGBT) is a vertical IGBT designed to operate at blocking voltages below about 15 kV. At these voltages, the drift and anode layers are too thin to allow complete removal of the
${n}^{+}$
substrate. Instead, a waffle pattern is etched through the substrate to expose the buried anode layer while preserving the structural integrity of the wafer. The feasibility of this approach is demonstrated by fabricating a 10-kV class
${n}$
-channel IGBT with a differential specific ON-resistance of 160
$\text{m}\Omega \cdot \text{cm}^{2}$
.
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关键词
10-kV class,4H-SiC,differential specific on-resistance,IGBT,laser annealing,waffle substrate
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