Zinc-Alloyed HFO2 Synaptic RRAM with Operating Voltage and Switching Energy Enhancement
2022 China Semiconductor Technology International Conference (CSTIC)(2022)
摘要
In this work, we demonstrate the performance engineering of a HfO
2
-based analog RRAM device based on a Zn alloying approach using ALD. The Zn-alloyed HfO
2
RRAM results in a significant smaller operating voltages and lower switching energy due to the increase in oxygen vacancies elucidated via XPS measurements. Meanwhile, its retention at 85 °C can exceed that of 10
5
s. The LTP and LTD of the Zn-alloyed RRAM shows good linearity for the implementation of artificial neural network in handwriting recognition. Our results provide a pathway for RRAM to meet the requirements of emerging embedded memory applications for analog computing.
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关键词
zinc-alloyed HFO2 synaptic RRAM,switching energy enhancement,oxygen vacancies,X-ray photoelectron spectra,artificial neural network,handwriting recognition,smaller operating voltages,analog computing,temperature 85.0 degC,Zn-HfO2
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