Multi-Technology 4-Channel GaN Rectenna MMIC Circuit for RF Radiative Wireless Power Beaming

A high-power, high-speed GaN nano-Schottky diode (NSD) MMIC is introduced capable of multi kW/m ² rectification for RF, microwave and millimeter wave radiative wireless power beaming applications. A 4-channel GaN NSD MMIC is designed and fabricated highlighting record diode performance capable of 30 THz.V, both achieving high speed and high-power handling simultaneously. The 4-channel GaN NSD MMIC is then used in a multi-technology rectenna circuit design and build where it was coupled with a low-pass filter in liquid-crystal-polymer substrate technology to complete the optimized rectenna performance. A novel design methodology is introduced where the MMIC is designed in an initial rectenna circuit. It is then fabricated and measured, and the diode model is backfitted for accuracy and the 3D model of the MMIC updated. The latter is then used to optimize the LCP low-pass filter and harmonic matching circuit for optimized performance at 93-95 GHz. Millimeter wave small signal analysis of the measured versus simulated for both the GaN MMIC and the Multi-technology rectenna circuit highlight accurate agreement with > 15 dB return loss at 93-95 GHz. The circuits will be coupled with millimeter wave antennas and measured at large signal using the transmitter in the near future.