Comparative analysis for semiconductor device selection in Vienna Rectifier for fast EV charging application

2020 IEEE First International Conference on Smart Technologies for Power, Energy and Control (STPEC)(2020)

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摘要
With Electric Vehicle (EV) becoming the cynosure of all eyes for sustainable transportation, the performance of the Power Electronic converters used for EV charging is of prime importance. The improved Figures Of Merit(FOM) of Silicon Carbide(SiC) devices over Silicon(Si) based devices enable improved system performance in terms of efficiency, power density, and reliability. This paper emphasizes on basic requirements from the semiconductor devices in Vienna Rectifier, which acts as a Front End Converter(FEC) for DC fast charging of EV. The simulation results of Vector controlled Vienna Rectifier are illustrated to ascertain device ratings and further, a comparative analysis is made for the selection of semiconductor switches in the realization of Vienna Rectifier.
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关键词
Semiconductor devices,Silicon Carbide(SiC),Vienna Rectifier
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