Introducing a comprehensive physics-based modelling framework for tandem and other PV systems

M.R. Vogt,C. Ruiz Tobon,A. Alcañiz,P. Procel, Y. Blom, A. Nour El Din, T. Stark, Z. Wang, E. Garcia Goma, J.G. Etxebarria,H. Ziar,M. Zeman,R. Santbergen,O. Isabella

Solar Energy Materials and Solar Cells(2022)

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摘要
We introduce a novel simulation tool capable of calculating the energy yield of a PV system based on its fundamental material properties and using self-consistent models. Thus, our simulation model can operate without measurements of a PV device. It combines wave and ray optics and a dedicated semiconductor simulation to model the optoelectronic PV device properties resulting in the IV-curve. The system surroundings are described via spectrally resolved ray tracing resulting in a cell resolved irradiance distribution, and via the fluid dynamics-based thermal model, in the individual cell temperatures. A lumped-element model is used to calculate the IV-curves of each solar cell for every hour of the year. These are combined factoring in the interconnection to obtain the PV module IV-curves, which connect to the inverter for calculating the AC energy yield. In our case study, we compare two types of 2 terminal perovskite/silicon tandem modules with STC PV module efficiencies of 27.7% and 28.6% with a reference c-Si module with STC PV module efficiency of 20.9%. In four different climates, we show that tandem PV modules operate at 1–1.9 °C lower yearly irradiance weighted average temperatures compared to c-Si. We find that the effect of current mismatch is significantly overestimated in pure optical studies, as they do not account for fill factor gains. The specific yields in kWh/kWp of the tandem PV systems are between −2.7% and +0.4% compared to the reference c-Si system in all four simulated climates. Thus, we find that the lab performance of the simulated tandem PV system translates from the laboratory to outdoors comparable to c-Si systems.
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关键词
Energy yield modelling,Tandem PV systems,Specific yield,Pervoskite/silicon tandem,Operating temperature,Opto-electric device simulation
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