TCAD Simulation of Single Event Effects on Electronic Devices

Abstract In this paper, lateral bulk PIN photodiodes designed at FEI University and SOI (Silicon-on-Insulator) PIN photodiodes from UCL are analyzed as photodetectors and SEE (Single Event Effects) sensors. Numerical simulations are used for radiation analysis of heavy ion striking the PIN photodiode using the parameters extracted by real measurements in a non-radiation condition. The occurrence of SEE near-Earth natural environment is unpredictable and is a serious threat that can lead to malfunctions of microprocessors, memory banks and devices that are vital to the correct behavior of a low-orbit or avionic mission. Detecting their occurrence and monitoring the energetic particles in radiation environments is vital and this paper investigates the consequence of SEE on lateral PIN photodiodes through experimentally calibrated TCAD numerical simulations.