A novel Ni-Al alloy Metal Induced Lateral Crystallization process for improved channel conduction in 3-D NAND Flash

S. Ramesh,K. Banerjee, K. Opsomer, I. Rachita,J. P. Bastos, J-Ph. Soulie, F. Sebaai,P. Favia, M. Korytov, O. Richard,L. Breuil,A. Arreghini,G. Van den bosch,M. Rosmeulen

IEEE Electron Device Letters（2022）

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摘要

In this letter, a Ni-Al alloy based metal induced lateral crystallization (MILC) process in a vertical Si channel, from 3-D NAND flash cell, is reported. Alloying Ni with Al improves NiSi2 nucleation, resulting in a favorable channel morphology after the silicide transport. We show that it is possible to achieve better ON-current and gate control over the existing Ni-only MILC process with no observable impact on the memory performance.

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关键词

3-D NAND,channel crystallization,current conduction,metal induced lateral crystallization,polysilicon

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