Graphene/PtSe/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection
IEEE Transactions on Electron Devices(2022)
摘要
Uncooled infrared (IR) photodetection has attracted increasing research interest due to its important applications in civil and military fields. Recently, platinum diselenide (PtSe2), a newly discovered group-10 two-dimensional (2D) noble metal dichalcogenide (NMD) member, has emerged as an attractive candidate for highly sensitive IR photodetection due to its layer-dependent bandgap transition from semiconductor to semimetal, wide optical absorption, and high carrier mobility. Here, we demonstrate the successful assembly of PtSe2/pyramid Si mixed-dimensional van der Waals (vdW) Schottky junction with a graphene transparent electrode. Due to the novel vertical device structure with a graphene top contact, the photodetector achieves an appealing device performance, including an ultrabroadband response up to
$10.6~\mu \text{m}$
, a high responsivity of 0.528 A/W, a large specific detectivity of ~1012 Jones, and a fast response time of
$8.2~\mu \text{s}$
at zero bias voltage. More importantly, these findings have enabled the realization of an excellent room-temperature long-wave IR (LWIR) imaging capability and its utilization as an optical receiver in optical IR communication. Our work demonstrates a reliable approach to the construction of a high-performance Schottky junction device for room-temperature broadband IR photodetection.
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关键词
Broadband infrared (IR),platinum diselenide,room temperature,van der Waals (vdW) Schottky junction
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