New Properties of Boron-Oxygen Dimer Defect in Boron-Doped Czochralski Silicon

Silicon doped with boron is the most widely used material in modern microelectronic devices based on p-Si. Therefore, it is important to thoroughly understand boron’s role in the processes of defect-impurity interaction in Si both on growing the material and during operation of devices. In this work, interactions of boron with oxygen in Si are investigated by studying boron absorption intracenter transitions, which are known to be highly sensitive to the local environment. In boron-doped Si, two lines with maxima at 228 and 261.3 cm−1 were detected. The linear dependence of lines intensity on boron concentration and the quadratic on oxygen content testifies that the defect responsible for the lines can be identified as BsO2i. The observed absorption lines correspond to the transitions from the ground to the excited states of boron, which are shifted toward lower frequencies relative to the main transitions due to a deformation perturbation from neighboring oxygen atoms. The activation energy of annealing and ionization energy of defect are determined. The properties of the registered ВsO2i defect differ from the known ВsO2 associated with the light-induced degradation of solar cells by local configuration. The data obtained testify that the ВsO2i defects with different properties can be formed in Si and must be taken into account when developing Si:B-based devices because they can play an important role in charge carrier transfer and affect the electrical and optical parameters of the material.