Ternary Resistive Switching Memory Behavior of Polycarbazole:Tio2 Nanoparticles-Based Device

In this paper, the donor-acceptor copolymer poly[2,7–9- (heptadecan-9-yl)-9H-carbazole-co-12H-benzo[5,6]isoindolo[2,1-a]benzimidazole-12-one] (PCz-BI) was synthesized by Suzuki reaction. Devices based on PCz-BI and titanium dioxide (TiO2) nanoparticles composite as the active layer were prepared by a spin coating method and showed ternary resistance switching storage properties. It was shown that the addition of metal oxide nanoparticles improves memory storage performances. The optimum TiO2 content was 6 wt% and this device had the lowest SET voltage of -0.5 V and the best switching current ratio of 1:101.6:104.8. Moreover, the developed device proved as highly stable during 103 cycles. The conductivity and the structural basis for the storage mechanism were studied using electrochemical measurements, ultraviolet-visible spectroscopy, and quantum chemical calculations.