Development and testing of a radiation-hard large-electrode DMAPS design in a 150 nm CMOS process

I. Caicedo,M. Barbero, P. Barrillon, C. Bespin, P. Breugnon, P. Chabrillat,Y. Degerli,J. Dingfelder, F. Guilloux,A. Habib, T. Hemperek, T. Hirono, F. Hügging, H. Krüger, P. Pangaud, A. Rozanov, P. Rymaszewski, L. Schall, P. Schwemling,M. Vogt

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment（2022）

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摘要

The LF-Monopix chips are depleted monolithic active pixel sensors that follow the large-electrode design approach and implement a fast synchronous read-out architecture. They are designed in a 150 nm CMOS process and make use of large voltages (>250V) and highly resistive substrates (>2kΩ⋅cm) to collect charge through drift and enhance their radiation hardness.

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关键词

Pixel detectors,DMAPS,Semiconductor detectors,Radiation hardness,TID,NIEL

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