High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories.
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)(2022)
摘要
We report for the first time on a thermally stable High-k/Metal Gate (HKMG) low cost CMOS FinFET solution for DRAM peripheral applications, integrated with Si:P and Si 0.55 Ge 0.45 :B embedded Source/Drain (S/D). The baseline is fully compatible with DRAM peripheral constraints (e.g. higher thermal budget linked to the co-integration with the DRAM cells), and exhibits improved I ON (I OFF ) and short channel control performance over Planar HKMG. Finally, a gate stack solution for V TH tuning (Diffusion and Gate Replacement, D&GR) compatible with DRAM thermal budget and FinFET flow is demonstrated, with no degradation of EOT/Gate leakage/BTI and proven functionality of SRAM.
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关键词
tunability
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