Design of a 24-GHz dual-polarized rectenna integrated on silicon
2021 51st European Microwave Conference (EuMC)(2021)
摘要
This paper presents the design of an integrated and differential rectenna on silicon, operating at 24 GHz. The antenna is dual-polarized and composed by four patches on a synthetized low effective permittivity dielectric. The substrate is a structure composed of three layers of high-resistivity silicon ($\varepsilon_{\mathrm{r}}= 11.9$ ) where the central layer has an air cavity equal to the dimensions of the antennas. The feeding solution is performed by planar microstrip lines with inset feeds. A shunt configuration was chosen for the rectifiers with GaAs diodes. The silicon substrate assures the complete integration for on-chip systems and despite the lossy material chosen as substrate, each patch antenna presents 83% of radiation efficiency with a maximum gain of 4.82 dBi. The overall efficiency of the rectenna is 43% at a received power level of 14 dBm.
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关键词
Rectennas,silicon integration,system on a chip,millimeter waves
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