Analysis of voltage and frequency-dependent series resistance and interface states of Al/ZnCo2O4: Gelatin/n-Si diode
Journal of Materials Science: Materials in Electronics(2022)
摘要
In this work, which aims to investigate the capacitance and conductance properties of ZnCo2O4-doped Gelatin, 5% ZnCo2O4-doped Gelatin film was grown on n-type silicon wafer by sol–gel spin coating with the aim of fabricating Al/ZnCo2O4:Gelatin/n-Si Schottky diode. This investigation also explores the series resistance
$$(R_{S} )$$
and interface state
$$(N_{ss} )$$
characteristics of a diode produced with ZnCo2O4:Gelatin interface layer. Electrical measurements were taken in the voltage range of − 5 V and + 2 V and the frequency range of 30 kHz and 1 MHz. The electrical properties of the diodes were characterized from voltage and frequency-dependent measurements. Capacitance–voltage (C-V) and conductance–voltage (G-V) characteristics yielded higher values showing the significance of the interface states. At lower frequencies, the rise in the capacitance value is signed to the interface state density. The values of
$$N_{SS}$$
for 30 kHz and 1 MHz frequency are 10.5 × 1011 and 4.19 × 1011 eV−1 cm−2. It is recommended to use the produced diode as an electronic device.
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关键词
al/znco2o4,voltage,gelatin/n-si,frequency-dependent
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