Continuous Single‐Crystalline GaN Film Grown on WS2‐Glass Wafer (small 41/2022)

Yue Yin,Bingyao Liu, Qi Chen,Zhaolong Chen,Fang Ren,Shuo Zhang,Zhetong Liu, Rong Wang,Meng Liang,Jianchang Yan,Jingyu Sun,Xiaoyan Yi,Tongbo Wei,Junxi Wang,Jinmin Li,Zhongfan Liu,Peng Gao,Zhiqiang Liu

Small（2022）

引用 5|浏览21

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摘要

Semiconductors In article number 2202529, Tongbo Wei, Zhongfan Liu, Peng Gao, Zhiqiang Liu, and co-workers find that geometry matched WS2 can provide a proper lattice potential field for nitrides epitaxial growth. By using a transferred WS2 buffer layer, a single-crystalline GaN epilayer can be obtained on an amorphous quartz glass by heterogenous epitaxy.

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