谷歌浏览器插件
订阅小程序
在清言上使用

A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration

2022 Microwave Mediterranean Symposium (MMS)(2022)

引用 1|浏览13
暂无评分
摘要
Terahertz (THz) domain is quickly developing with various applications such as beam diagnostics at particle accelerators, spectroscopy, communications, space science, etc. However, often requiring fast intermediate frequency (IF) electronics. We present the design of a double mirror stub (DMS) based a planar broadband bias tee having an isolation port S 31 with 14.45 GHz bandwidth below −10 dB and S 33 with 13.1 GHz bandwidth above −2 dB. CST simulation and measured results are in very good agreement. The bias tee will be a part of a new generation of on-chip THz detectors based on zero-bias Schottky diode and high electron mobility field effect transistor (HEMT).
更多
查看译文
关键词
bias tee,broadband THz detectors,Field Effect Transistor (FET),room temperature THz detectors,S-parameters,Schottky Diode (SD),Terahertz (THz)
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要