A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration
2022 Microwave Mediterranean Symposium (MMS)(2022)
摘要
Terahertz (THz) domain is quickly developing with various applications such as beam diagnostics at particle accelerators, spectroscopy, communications, space science, etc. However, often requiring fast intermediate frequency (IF) electronics. We present the design of a double mirror stub (DMS) based a planar broadband bias tee having an isolation port S 31 with 14.45 GHz bandwidth below −10 dB and S 33 with 13.1 GHz bandwidth above −2 dB. CST simulation and measured results are in very good agreement. The bias tee will be a part of a new generation of on-chip THz detectors based on zero-bias Schottky diode and high electron mobility field effect transistor (HEMT).
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关键词
bias tee,broadband THz detectors,Field Effect Transistor (FET),room temperature THz detectors,S-parameters,Schottky Diode (SD),Terahertz (THz)
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