Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate

G. Navarro, C. Sabbione, V. Meli,L. E. Nistor, M. Frei, J. Garrione, M. Tessaire, F. Fillot,N. Bernier,E. Nolot, B. Sklenard,J. Li,S. Martin, N. Castellani, G. Bourgeois, M. C. Cyrille,F. Andrieu

2022 IEEE International Memory Workshop (IMW)（2022）

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摘要

In this work we investigate the benefits of amorphous Multilayer (ML) deposition in Phase-Change Memory (PCM). Different ML stacks based on Ge 1 Sb 2 Te 4 composition are developed and characterized by physico-chemical analyses, providing a spectacular demonstration of highly-textured crystalline layer after high thermal budget and of higher layer uniformity. ML PCM device performances are evaluated at statistical level in 16 kb arrays, showing a lower electrical parameters variability, best endurance results and lowest Bit Error Rate wrt equivalent bulk layer.

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关键词

Phase-Change Memory,best endurance performance,reduced Bit Error Rate,amorphous Multilayer deposition,different ML stacks,1 Sb,physico-chemical analyses,highly-textured crystalline layer,high thermal budget,higher layer uniformity,ML PCM device performances,endurance results,lowest Bit Error Rate wrt equivalent bulk layer

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