P‐1.8: A New n ⁺ ‐Formation Process by NH ₃ Plasma Treatment for Top Gate Coplanar IGZO Thin‐film Transistors

In coplanar structure thin‐film transistor (TFT), the formation of source/drain region with doping process is important to get high mobility. In this paper, the effects of NH 3 plasma treatment to form n + region have been investigated. The results show that the top gate coplanar structure Amorphous indium‐gallium‐zinc‐oxide(a‐IGZO) TFTs with n + source/drain by NH 3 treatment exhibit high mobility and good subthreshold swing (SS), which indicates that the NH 3 plasma treatment can effectively reduce the contact resistance.