Improved resolution with main chain scission resists for EUV lithography

In this work, imec and Zeon introduce the resist with new concept and report the lithography performance. Zeon has developed a new resist (ZER02#05M) in order to improve both resolution and lithography performance because conventional Zeon resists generated worse resolution and kissing(C/H)/pinching(L/S) defects at tight pitch by top loss. The lithography performance at hexagonal contact hole (C/H) patterns with ZER02#05M is presented at ADI. For P40nm hexagonal C/H pattern in ADI by new resist, the lithography performance at CD17.5 nm in hole CD was achieved at the exposure dose of 92 mJ/cm(2), giving a LCDU of 2.74 nm. It at CD18nm in P38nm hexagonal C/H pattern was resolved at 105 mJ/cm(2), with a LCDU of 2.95 nm. t at CD18nm it at CD 17nm in P36nm hexagonal C/H pattern was resolved at 92 mJ/cm(2), with a LCDU of 4.12 nm. Entire results with ZER02#05M could improve LCDU compared to ZER02#04DM, especially at larger CD. Additionally, patterning performance in AEI with 05 which did not optimize polymer properties could transfer patterns well and enhance LCDU compared to ZER02#04DM.