Electrical, Thermal and Stress Simulation Analyses of SiC MOSFET Power Integrated Module (PIM) Development

The wide-bandgap power devices have high-temperature operation, high breakdown voltage, and high-frequency operation, and are the mainstream technology for the future EV/HEV and green energy markets. In order to increase the driven power, decrease the heat dissipation, and shrink system size for industrial and servo motor applications, this study is focused on a 1200V/200A power integrated module (PIM) development with silicon carbide (SiC) MOSFET and module performance evaluation in electrical, thermal and mechanical fields. The insulated metal baseplate (IMB) and direct potting epoxy resin material were employed in the power module. Moreover, the simulation analysis results were calibrated with measurement results of the power module and it would help to improve module performance and predict module reliability in the future.