Sub-stochiometric MoO x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells
CHINESE PHYSICS B(2022)
摘要
The silicon heterojunction (SHJ) solar cell has long been considered as one of the most promising candidates for the next-generation PV market. Transition metal oxides (TMOs) show good carrier selectivity when combined with c-Si solar cells. This has led to the rapid demonstration of the remarkable potential of TMOs (especially MoO x ) with high work function to replace the p-type a-Si:H emitting layer. MoO x can induce a strong inversion layer on the interface of n-type c-Si, which is beneficial to the extraction and conduction of holes. In this paper, the radio-frequency (RF) magnetron sputtering is used to deposit MoO x films. The optical, electrical and structural properties of MoO x films are measured and analyzed, with focus on the inherent compositions and work function. Then the MoO x films are applied into SHJ solar cells. When the MoO x works as a buffer layer between ITO/p-a-Si:H interface in the reference SHJ solar cell, a conversion efficiency of 19.1% can be obtained. When the MoO x is used as a hole transport layer (HTL), the device indicates a desirable conversion efficiency of 17.5%. To the best of our knowledge, this current efficiency is the highest one for the MoO x film as HTL by RF sputtering.
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关键词
radio-frequency magnetron sputtering, silicon heterojunction (SHJ) solar cell, MoO x, hole transport layer
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