In-Line Raman Spectroscopy: High-Throughput Strain Metrology for 3D Devices

Amir Nourbakhsh, Lan Yu,Tyler Sherwood, Xing Chen,Siddarth Krishnan, P. Y. Hung,Aron Cepler,Marjorie Cheng,Yonatan Oren

2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)（2022）

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摘要

In-line, nondestructive strain measurements are obtained on high aspect ratio 3D device structures using Raman scatterometry on full 300-mm wafers. In-line Raman spectroscopy allows for the monitoring of high-volume manufacturing, thereby offering benefits that include cost savings and faster and improved process control.

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关键词

Raman spectroscopy,strain,3D devices,TSV

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