Room Temperature Triggered Single Photon Emission from Self-Assembled GaN/AlN Quantum Dot in Nanowire

Room temperature (RT) operation is one of the crucial requirements for the practical applications of single photon emitters. Here, RT triggered single photon emission from self-assembled GaN quantum dots (QDs) embedded in AlN nanowires grown by molecular beam epitaxy on Si (111) substrate is demonstrated. Photoluminescence of GaN/AlN QDs show strong emission in the range of 3.6-4.1 eV at 4.7 K, with average full width at half maximum of approximate to 2.7 meV, the sharpest one reaches as narrow as 1.6 meV. The QD exhibits a fast-radiative lifetime of approximate to 0.98 ns at 4.7 K due to strong quantum confinement. A clear antibunching effect is observable up to RT, with a second-order correlation function at zero time delay g((2))(0) = 0.35 +/- 0.05, confirming single photon emission at RT, manifesting strong potential for practical quantum information applications.