Photoelectric properties of tellurium nanowires by a green thermal solvothermal method

As typical P-type narrow-band semiconductors, tellurium nanostructures have received extensive attention in fabrication of modern microdevices. However, their synthesis generally requires the use of toxic reducing agents and difficult operating conditions.In this study, a green thermal solvothermal method was used to synthesize tellurium nanowires, whereby Polyvinylpyrrolidoe was used as a soft template and ethylene glycol Delivered by Ingenta was used not only as a mild solvent but also as a reducing agent. We studied the optoelectronic properties of tellurium nanowire devices, the mobility of which was 200 cm(2)v(-1)s(-1) at 7 K. We also measured the transient response under 650 nm laser irradiation, and spectral response of tellurium nanowire photodetectors degree was 1.02 WA(-1). Photoelectric effect generation mechanism for tellurium nanowires was at the same time further studied. We believe that tellurium nanowires have great development prospects in the field of optoelectronic devices.