Ultra-wide band and improved quality factor SH-type SAW devices by employing Mn-doped Pb(In1/2Nb1/2)O3– Pb(Mg1/3Nb2/3)O3–PbTiO3 thin film/diamond layered structure

This paper presents a piezoelectric layered structure composed of Mn-doped PIN-PMN-PT thin film combined with diamond for high electromechanical coupling factor (K-2) and improved quality factor (Q) SAW devices. Comprehensive theoretical analysis of SAW resonator on the proposed structure is performed to calculate its SAW characteristics including K-2, V (phase velocity) and Q. The influence of the Euler angle, Mn-doped PIN-PMN-PT layer's thickness and the electrode's thickness as well as electrode's materials on the SAW properties are investigated. It is shown that the maximum electromechanical coupling factor of the proposed structure has been theoretically shown up to be 79.5 % for the main mode called shear-horizontal (SH)-type SAW. The FOM(K-2.Q) is enhanced to 868.5, which is more than two times larger than that of the previously reported work using pure PIN-PMN-PT. Such enhancement of FOM makes such structure has great potential application in ultra-wide band and high Q SAW filters operating at 1GHz-3GHz.