谷歌浏览器插件
订阅小程序
在清言上使用

A 9b-Linear 14GHz Integrating-Mode Phase Interpolator in 5nm FinFET Process

International Solid-State Circuits Conference(2022)

引用 6|浏览7
暂无评分
摘要
Increased data-rates and multi-lane SerDes implementations impose stringent conditions for CDRs to produce low-jitter clocking that is capable of managing frequency and phase offsets. Consequently, high-speed phase interpolators (Pls) must be both low-power and compact for multi-lane requirements, but also high-resolution with respect to the clock period $(\mathrm{T}_{\text{period}})$ , with high static and dynamic phase linearity to minimize the PI jitter. Prior art in Pls is limited to 7-8b measured resolution [1]–[4], and INL of >500fs [1]–[4]. We present a 9b Pl; even with the additional bits, the proposed PI consumes low power of 0.43mW/GHz and a small area. The worst rotation spur is at least 8.1 dB lower (than [4]), and DNL/INL values of 295fs/510fs are $> 144\times$ better than prior-art. Implemented in 5nm technology at VDD $=075\mathrm{V}$ , our design leverages digital and analog techniques easily suited to FinFET operation.
更多
查看译文
关键词
FinFET process,increased data-rates,multilane SerDes implementations,stringent conditions,low-jitter clocking,phase offsets,high-speed phase interpolators,multilane requirements,clock period,high static phase linearity,dynamic phase linearity,PI jitter,measured resolution,linear integrating-mode phase interpolator,low-power,digital techniques,analog techniques,time 295.0 fs,time 510.0 fs,size 5.0 nm,voltage 75.0 V,frequency 14.0 GHz,word length 9 bit
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要