2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

In this letter, we demonstrate high-performance lateral AlGaN/GaN hybrid anode diodes (HADs) with p-GaN stripe array gate (PSAG) structure with much reduced turn-on voltage ( ${V}_{\text {T}}$ ) compared with reference p-GaN gate HADs. Without field plates (FPs) or passivation, the PSAG-HAD with an anode-cathode distance ( ${L}_{\text {AC}}$ ) of 20 $\mu \text{m}$ and p-GaN extension length ( ${L}_{\text {E}}$ ) of 3 $\mu \text{m}$ showed a low ${V}_{\text {T}}$ of 0.8 V, a low reverse leakage current of 1.87 nA/mm at −1 kV, a high ${I}_{\text {ON}}/{I}_{\text {OFF}}$ ratio of $\sim 10^{{11}}$ , a high breakdown voltage (BV) of 2.69 kV and a low specific ON-resistance ( ${R}_{\text {ON,sp}}$ ) of 2.11 $\text{m}\Omega \cdot $ cm2. This results in a Baliga’s figure-of-merit of 3.43 GW/cm2, which is the highest among reported lateral GaN HADs to date. This work shows that the PSAG-HADs are promising for next-generation high-voltage high-efficiency power electronics.