Highly Sensitive MoS2 Photodetector Based on Charge Integration and Field-Coupled Effect

In this article, a highly sensitive molybdenum disulfide (MoS2) photodetector based on charge integration and field-coupled effect has been designed and fabricated. The mechanism of field-coupled effect and the photoresponse properties of the devices have been demonstrated and evaluated. Due to the strong absorption and photon-charges integration by deep-depletion region in a lightly doped silicon substrate, the strong field-coupled effect by few-layer MoS2 channel, and the effective carrier collection by monolayer graphene (Gr) electrode, the proposed MoS2-based photodetector exhibits an ultrahigh responsivity of $7.5\times 10^{{4}}$ A/W and achieves a compromise between responsivity and response speed. The deep-depletion effect triggered by pulse gate voltage enables effective manipulation and high linearity. A comparison with Gr channel shows the advantage of MoS2 photodetector in suppressing the reset current and reducing static power consumption to ~0.1 nW. This work provides a new route for improving the performance of TMDs-based photodetectors.