Simulation of TAZ:Ir(ppy)3-BCP/ZnO heterostructure OLED

In this article, we report the temperature dependent I-V characteristics of TAZ:Ir(ppy)3-BCP/ZnO heterostructure based OLED. In addition, we have also optimized the thickness of the ETL (electron transport layer) of the designed OLED. For the optimized ETL (ZnO layer) we have simulated the I-V characteristics, Voltage vs light flux curves and current density vs light flux curves.