Substrate Effect on Low-frequency Noise of synaptic RRAM devices

The analysis of noise signals produced by semiconductor devices provides significant information for the origin and the physical mechanisms causing them, allowing for the mitigation of the noise sources, and improving the device performance. Furthermore, noise signals generated by RRAM and memristive devices can be utilized in cryptography security for applications due to their stochastic nature, revealing the positive effects of noise signals. In this work, the noise signals originated from metal-nitride-semiconductor memristive devices are investigated in terms of the influence of the wafer substrate used to fabricate them. Specifically, metal-insulator-semiconductor memristive devices on bulk Si and Silicon-On-Insulator substrates are examined. Parameter extraction and statistical analyses are performed assuming the typical models used for MOSFET devices. Preliminary results suggest that the measured noise signals originated from electron traps sited in the silicon nitride resistance switching layer. However, devices on SOI substrate generate lower noise signals compared to bulk devices, probably due to the better isolation of the active layer.