Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)(2022)
摘要
Experimental analysis of polarization switching in metal-ferroelectric- metal and metal- ferroelectric-dielectric-metal junctions is reported. Combined GIXRD and electrical analyses demonstrate that insertion of
$\mathrm{A}1_{2}\mathrm{O}_{3}$
dielectric layer boosts the ferroelectric polarization. Ferroelectric switching measurements at various frequencies show that the injection and trapping of charges into the ferroelectric-dielectric stack have a large influence on the polarization switching.
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关键词
Alumina,ferroelectric devices,hafnium oxide,memory,switching frequency,trapping,tunnel junction
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