Reliability of Power Devices with Copper Wire Bond
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)(2022)
摘要
In this study, we evaluate yield and reliability for a smart power device fabricated in 0.35 μm technology. The wire bonds are formed with 50.8 micron (2 mil) diameter Pd-coated Cu wire. For a conventional wire bond process, there is a risk of damage to interconnect layers under the bond pads, resulting in yield loss and reliability failures. In contrast, by using a segmented wire bond process, the yield loss associated with bond pad damage is eliminated and highly reliable wire bond connections are achieved.
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关键词
wire bond,copper,power semiconductor
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