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Stochastic Resonance Effect in Binary STDP Performed by RRAM Devices

2022 IEEE 22nd International Conference on Nanotechnology (NANO)(2022)

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摘要
The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron synapse in neuromorphic architectures, can be better distinguished if a gaussian noise is added to the bias. The addition of noise allows to reach memristor conductances which are proportional to the overlap between pre- and post-synaptic pulses.
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关键词
Stochastic resonance,RRAM,memristor,resistive switching,STDP,neuromorphic systems
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