Recent Progress in GaON for Performance Enhancement of GaN-based Devices

In this abstract, the recent progress of GaON investigation aiming at enhancing GaN-based devices performance is reviewed. Crystalline GaON thin film can be formed using a two-step formation strategy on the GaN-based device platform. Owing to its large bandgap, high thermal stability, relatively large valence band offset with GaN, and the high-quality GaON/GaN interface, GaON is attractive for the device engineering of various GaN devices, including enhancing electric- field strength, improving interface quality, and providing a hole energy barrier.