DFT Coupled with NEGF Study of N-Type MOSFET Based on 2D Planar B2S3 Semiconductor

Two-dimensional (2D) materials with excellent properties can inhibit short-channel effects and are considered the next generation of channel materials. Here, we investigate the electronic properties of a new planar 2D semiconductor B2S3 and device performance limits of 2D B2S3 double-gated metal oxide-semiconductor field-effect transistors (MOSFETs) via ab initio simulations. The monolayer B2S3 possesses a direct band gap of 1.87 eV. The MOSFETs can also fulfill the International Technology Roadmap for Semiconductor (ITRS) requirements for high-performance (HP) devices, even if the channel length is reduced to 4 nm. Specifically, the 10 nm monolayer B2S3 n-MOSFETs have an extremely high on-state current Ion value of 4279 mu A/mu m and low subthreshold swing (SS) of 18 mV/dec When taking underlap structure into account, the performances of n-type B2S3 MOSFETs can fulfill the HP ITRS even if the gate length is only 3 nm. Thus, we think 2D B2S3 is an attractive channel material for ultrascaled electronic devices.