Recombination with plasmon emission in HgTe/CdHgTe multiple quantum well heterostructures

The work is devoted to the theoretical study of the process of recombination of nonequilibrium charge carriers with the emission of plasmons in structures with two and three quantum wells, and also in an infinite number quantum-well structure under conditions of inverse band population. The plasmon spectra in these structures have been calculated. The dependence of the average probability of electron recombination with plasmon emission on the concentration of nonequilibrium carriers for three temperatures has been found. It has been shown that an increase in the number of quantum wells leads to a slight increase in the average recombination probability.