Nonstoichiometric Germanosilicate Films on Silicon for Microelectronics: Memristors and Other Applications

The structure of the initial films of nonstoichiometric germanosilicate glasses is analyzed and transformation of their structure upon annealing is studied using Raman spectroscopy and IR spectroscopy. It is shown that the structure of the films is stable up to a temperature of 350 ^∘ C, and amorphous germanium clusters are formed in the films upon annealing from 400 ^∘ C. Metal–insulator–semiconductor structures are fabricated on the basis of these films. These structures are promising for use in memristors and photodetectors.